Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology TOKYO— Toshiba Corporation (TOKYO: 6502) today announced breakthroughs in ...

Spin-orbit transfer magnetic random-access memory (SOT-MRAM) is becoming more visible in next-generation memory offerings for its faster write speeds and much longer endurance. Two recent ...

A technical paper titled “First demonstration of in-memory computing crossbar using multi-level Cell FeFET” was published by researchers at Robert Bosch, University of Stuttgart, Indian Institute of ...

Flash memory is on a roll. It has gone from a backup, secondary technology to a mainstream product technology that's critical to a wide range of consumer and embedded applications. Flash memory, warts ...

The IEEE International Solid State Circuits Conference celebrated its 70 th anniversary in San Francisco, CA. The conference covers all manner of solid-state electronics technology. In this article we ...

In-memory computing (IMC) has had a rough go, with the most visible attempt at commercialization falling short. And while some companies have pivoted to digital and others have outright abandoned the ...