A research team from the Faculty of Engineering at the University of Hong Kong (HKU) has successfully used mechanical stretching technology to dynamically control the emission color of gallium nitride ...
DURHAM, N.C.--(BUSINESS WIRE)--Cree, Inc. (Nasdaq: CREE) announces the qualification and production release of two new GaN processes: G40V4, a 0.25µm process with operating drain voltage up to 40V, ...
Researchers in Japan showed that growing Eu-doped GaN on a semipolar GaN plane selectively forms highly efficient Eu ...
Thermal treating of metallic magneiusm on gallium nitride semiconductor results in the formation of a distinctive superlattice structure. Magnesium, nitrogen, gallium atoms are shown in orange, blue, ...
SARATOGA, Calif.--(BUSINESS WIRE)--Mojo Vision, the high-performance micro-LED company, today announced an important development and process milestone with the successful light-up of the first-ever ...
Researchers at OSRAM Opto Semiconductors have succeeded in manufacturing high-performance blue and white LED prototypes in which the light-emitting gallium-nitride layers are grown on silicon wafers ...
Gallium nitride is starting to make broader inroads in the lower-end of the high-voltage, wide-bandgap power FET market, where silicon carbide has been the technology of choice. This shift is driven ...
Gallium nitride (GaN) is a binary III/V semiconductor seen as a potential successor to silicon. GaN has a wider bandgap than silicon, meaning it can maintain higher voltages in electronic devices. 1 ...
A study revealed that a simple thermal reaction of gallium nitride with metallic magnesium results in the formation of a distinctive superlattice structure. This represents the first time researchers ...