Members can download this article in PDF format. Traction inverters based on silicon insulated-gate bipolar transistors (IGBTs) have been the go-to technology for electric vehicles (EVs). However, to ...
Researchers from National Yang Ming Chiao Tung University (Taiwan) published a technical paper titled “A Machine Learning Approach to Modeling Intrinsic Parameter Fluctuation of Gate-All-Around Si ...
Silicon carbide (SiC) MOSFETs are increasingly used in high-power applications owing to their superior switching speeds, low on‐resistance and enhanced thermal performance. In order to achieve higher ...
Traction inverters based on silicon insulated-gate bipolar transistors (IGBTs) have been the go-to technology for electric vehicles (EVs). However, to improve the power efficiency of EVs, these ...
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