A tough challenge for test engineers is explored in terms of test methods, pitfalls, and measurement errors. For the test engineer, RF and microwave power amplifier testing imposes unique challenges.

Over the years, tutorials have appeared in EMC journals explaining how to estimate the power required from a power amplifier intended for use in an RF immunity test system. Little material, if any, ...

Designed for the toughest engineering environments, NXP Semiconductors N.V. (NASDAQ: NXPI) today unveiled its new XR family of “eXtremely Rugged” LDMOS RF power transistors. The XR family is designed ...

NXP Semiconductors and Freescale have made additions to their rf power transistor portfolios in advance of the forthcoming International Microwave Symposium. NXP has expanded its eighth generation ...

Freescale Semiconductor has introduced an RF power LDMOS transistor that combines the industry’s highest output power and efficiency with the greatest ruggedness of any competitive device in its class ...

Doherty amplifiers by three points and improves gain by 1 dB. The Gen8 LDMOS RF power transistors offer up to 115 MHz of signal bandwidth to enable full-band operation for all cellular frequency bands ...

IRVINE, Calif., June 6, 2011 (GLOBE NEWSWIRE) -- Microsemi Corporation (Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, has expanded ...

PHOENIX--(BUSINESS WIRE)--Freescale Semiconductor [NYSE: FSL], the global leader in radio frequency (RF) power transistors, today introduced two ultra-wideband RF power gallium nitride (GaN) ...

Macom has announced a 500W (peak) GaN-on-Si power transistor for pulsed L-Band airport surveillance radar at 1.2-1.4GHz. Called MAGX-101214-500, greater than 70% power efficiency is claimed during 50V ...

STMicroelectronics is adding a broad range of devices to the STPOWER family of LDMOS transistors, which comprises three different product series optimised for RF power amplifiers (PAs) in a variety of ...